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GC080N65QF - Goford Semiconductor - HK LIANYIXIN INDUSTRIAL CO., LIMITED

GC080N65QF

Manufacturer:
Goford Semiconductor
Part Number:
GC080N65QF
Category:
Single FETs, MOSFETs
Description:
MOSFET N-CH 650V 50A TO-247
Datasheets:
RoHS Status:
Lead free/Rosh Compliant
In Stock:
6,903

Specifications

TYPE
DESCRIPTION
Manufacturer :
Goford Semiconductor
Category :
Single FETs, MOSFETs
Current - Continuous Drain (Id) @ 25°C :
50A (Tc)
Drain to Source Voltage (Vdss) :
650 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
4900 pF @ 380 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-247-3
Power Dissipation (Max) :
298W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
80mOhm @ 16A, 10V
Supplier Device Package :
TO-247
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
5V @ 250µA

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