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NP110N04PUG-E1-AY - Renesas Electronics Corporation - HK LIANYIXIN INDUSTRIAL CO., LIMITED

NP110N04PUG-E1-AY

Manufacturer:
Renesas Electronics Corporation
Part Number:
NP110N04PUG-E1-AY
Category:
Single FETs, MOSFETs
Description:
MOSFET N-CH 40V 110A TO263
Datasheets:
RoHS Status:
Lead free/Rosh Compliant
In Stock:
9,888

Specifications

TYPE
DESCRIPTION
Manufacturer :
Renesas Electronics Corporation
Category :
Single FETs, MOSFETs
Current - Continuous Drain (Id) @ 25°C :
110A (Tc)
Drain to Source Voltage (Vdss) :
40 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
390 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
25700 pF @ 25 V
Mounting Type :
Surface Mount
Operating Temperature :
175°C (TJ)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) :
1.8W (Ta), 288W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
1.8mOhm @ 55A, 10V
Supplier Device Package :
TO-263
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 250µA

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  • From $40.00 basic shipping fee depend on zone and country.

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